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| D G S TO-247 ARF461A ARF461B Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high efficiency classes of operation. * Specified 250 Volt, 40.68 MHz Characteristics: * Output Power = 150 Watts. * Gain = 13dB (Class AB) * Efficiency = 75% (Class C) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RqJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage * Low Cost Common Source RF Package. * Low Vth thermal coefficient. * Low Thermal Resistance. * Optimized SOA for Superior Ruggedness. Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Power Dissipation @ TC = 25C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. P E R 1 IM L A IN All Ratings: TC = 25C unless otherwise specified. ARF461A/B UNIT Volts Y R 1000 1000 6.5 30 250 0.50 -55 to 150 300 Amps Volts Watts C/W C STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Voltage (I D(ON) = 3.25A, VGS = 10V) MIN TYP MAX UNIT Volts 1000 6.5 25 A Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 3.25A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 250 100 3 3 4 5 nA mhos 050-5987 Rev A 7-2001 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 50V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6W MIN TYP ARF461A/B MAX UNIT 1700 175 50 8 5 21 10.1 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS h y Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 40.68 MHz VGS = 0V VDD = 250V MIN TYP MAX UNIT dB % 13 70 15 75 Pout = 150W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 25 20 GAIN (dB) 15 Class C VDD = 150V CAPACITANCE (pf) 10 5 0 30 P 45 E R Pout = 150W IM L A IN 5000 1000 500 100 50 Y R Ciss Coss Crss 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 10 .1 .5 1 5 10 50 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 8 ID, DRAIN CURRENT (AMPERES) TJ = -55C ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 26 100uS 10 5 OPERATION HERE LIMITED BY RDS (ON) 6 1mS 4 1 .5 TC =+25C TJ =+150C SINGLE PULSE 10mS 050-5987 Rev A 7-2001 2 TJ = +125C TJ = +25C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics TJ = -55C 100mS DC .1 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area ARF461A/B 1.2 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 25 VGS=15, 10, 8 & 6.5V 20 6V 15 1.1 1.0 5.5V 0.9 10 5V 4.5V 4V 0.8 5 0.7 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature 160 Class C VDD = 150V POUT, POWER OUT (WATTS) f = 81.36 MHz 120 0 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics GPS, COMMON SOURCE AMPLIFIER GAIN (dB) 14 12 Class C VDD = 150V 80 10 40 0 0 4 6 8 10 PIN, POWER IN (WATTS) Figure 7, Typical Power Out vs Power In 2 0.6 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.05 0.01 0.005 0.01 SINGLE PULSE PDM P 0.2 0.1 0.05 0.02 E R 10-4 IM L 40 80 120 160 POUT, POWER OUT (WATTS) Figure 8, Typical Common Source Amplifier Gain vs Power Out A IN 8 6 0 Note: Y R f = 81.36 MHz t1 t2 Duty Factor D = t1/t2 qJC Peak TJ = PDM x ZJC + TC Z 0.001 10-5 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27 40 65 Zin () 20.4 - j 9.6 2.1 - j 6.4 .50 - j 2.3 .20 - j 0.4 .46 + j 2.0 ZOL () 148 - j 20 84 - j 74 36 - j 63 19 - j 48 7.7 - j 30 Zin - Gate shunted with 25 IDQ = 100mA ZOL - Conjugate of optimum load for 150 Watts output at Vdd = 250V 050-5987 Rev A 7-2001 ARF461A/B L4 Bias 0 - 12V RF Input + C6 R1 C7 L3 C9 C8 + C1 -- 1800pF + 1000pF 100V chips 250V mounted at gate lead - C4 C5 L1 R2 C1 DUT L2 C3 C2 40.68 MHz Test Circuit C2-C5 -- Arco 463 Mica trimmer C6-C8 -- .1 mF 500V ceramic chip C9 -- 2200 pF 500 V chip RF L1 -- 4t #20 AWG .25"ID .3 "L ~80nH Output L2 -- 7t #16 AWG .4" ID .5"L ~335nH L3 -- 25t #24 AWG .25"ID ~2.2uH L4 -- VK200-4B ferrite choke 3uH R1-R2 -- 51 Ohm 0.5W Carbon DUT = ARF461A/B 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) P E R 6.15 (.242) BSC 4.50 (.177) Max. 1.01 (.040) 1.40 (.055) IM L Top View 15.49 (.610) 16.26 (.640) A IN Y R TO-247 Package Outline 5.38 (.212) 6.20 (.244) Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. Source 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) Device ARF - A ARF - B Gate Drain Source Source Drain Gate 050-5987 Rev A 7-2001 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 |
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